Theoretical Analysis of Transconductance Enhancement Caused by Electron-Concentration-Dependent Screening in Heavily Doped Systems (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
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概要
- 論文の詳細を見る
A new mobility model dependent upon electron concentration is presented for studying the screening effect on ionized impurity scattering. By coupling this model with the drift-diffusion and Hartree models, the effects of self-consistent and quasi-equilibrium screening on carrier transport in heavily doped systems are revealed for the first time. The transport mechanism is found to be dominated by the electron-concentration-dependent mobility, and transconductance is shown to be determined by effective mobility and changes from degraded to enhanced characteristics with electron concentration modulation.
- 社団法人電子情報通信学会の論文
- 1994-02-25
著者
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Ohbu I
Hitachi Ltd. Tokyo Jpn
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Ohbu Isao
The Central Research Laboratory Hitachi Ltd.
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Mizuta H
Univ. Tokyo Tokyo
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Mizuta Hiroshi
The Central Research Laboratory Hitachi Ltd.
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Yamaguchi K
Corporate Research & Development Center Toshiba Corporation
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Ho Shirun
the Central Research Laboratory, Hitachi, Ltd.
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Kagaya Osamu
the Central Research Laboratory, Hitachi, Ltd.
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Moriyoshi Aya
the Central Research Laboratory, Hitachi, Ltd.
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Yamaguchi Ken
the Central Research Laboratory, Hitachi, Ltd.
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Ho Shirun
Advanced Research Laboratory Hitachi Ltd.
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Kagaya Osamu
The Central Research Laboratory Hitachi Ltd.
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Moriyoshi Aya
The Central Research Laboratory Hitachi Ltd.
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