Hot Carrier Induced Degradation Due to Multi-Phonon Mechanism Analyzed by Lattice and Device Monte Carlo Coupled Simulation(<Special Issue>the IEEE International Coference on SISPAD '02)

概要

論文の詳細を見る
A new multi-phonon model for hydrogen desorption at Si/SiO_2 interface due to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte Carlo method is coupled with Device Monte Carlo method by using a mediator-based common software platform. The power law between interface trap density and time (N_u ∝ t^α) of which power α = 0.5 is demonstrated and shows good agreement with experimental results. Dependence of V_<th> shift on the current stress time is analyzed accurately by introducing an electron trap model. According to the multi-phonon mechanism, it is found that hot carriers will generate defects on the gate dielectrics in 13 nm gate device under low operation voltage of V_d = 0.5V but density of interface traps after long stress time is suppressed to 10^<15>m^<-2>.
社団法人電子情報通信学会の論文
2003-03-01