Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
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概要
- 論文の詳細を見る
A unified model for frequency-dependent characteristics of transconductance and output resistance is presented that incorporates the dynamics of quasi-Fermi levels. Using this model, multiple-frequency dispersion and pulse-narrowing phenomena in GaAs MESFETs are demonstrated based on the drift-diffusion transport theory and a Schockley-Read-Hall-type deep trap model, where rate equations for multiple trapping processes are analyzed self-consistently. It is shown that the complex frequency dependence is due to both spatial and temporal effects of multiple traps.
- 社団法人電子情報通信学会の論文
- 1994-02-25
著者
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Mizuta H
Univ. Tokyo Tokyo
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Mizuta Hiroshi
The Central Research Laboratory Hitachi Ltd.
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Yamaguchi K
Corporate Research & Development Center Toshiba Corporation
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Ho Shirun
the Central Research Laboratory, Hitachi, Ltd.
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Oohira Masaki
the Central Research Laboratory, Hitachi, Ltd.
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Kagaya Osamu
the Central Research Laboratory, Hitachi, Ltd.
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Moriyoshi Aya
the Central Research Laboratory, Hitachi, Ltd.
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Yamaguchi Ken
the Central Research Laboratory, Hitachi, Ltd.
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Ho Shirun
Advanced Research Laboratory Hitachi Ltd.
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Kagaya Osamu
The Central Research Laboratory Hitachi Ltd.
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Moriyoshi Aya
The Central Research Laboratory Hitachi Ltd.
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Oohira Masaki
The Central Research Laboratory Hitachi Ltd.
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