Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-10-01

著者

• KUDO Makoto

  Central Research Laboratory, Hitachi, Ltd.

• Kudo Makoto

  Central Research Lab. Hitachi Ltd.

• MISHIMA Tomoyoshi

  Central Research Laboratory, Hitachi, Ltd.

• Mishima Tomoyoshi

  Central Research Lab. Hitachi Ltd.

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
• Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
• Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
• Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
• Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
• Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
• InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
• InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
• High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
• Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
• Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
• Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
• Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
• Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
• 1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
• Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
• Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
• Applying a Mode Selector to Improve the Pulse-Compression Performance of Asymmetric-Coupled-Waveguide-Based Dispersion Compensators
• Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
• A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
• Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment
• High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure
• Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
• Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
• Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing

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