Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors

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概要

• 論文の詳細を見る

• The influence of substrate orientation on Be transport during GaAs molecular beam epitaxy is evaluated by secondary ion mass spectrometry and from the current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). The Be doping level employed is from 2 × 10^<19> cm^<-3> to 9 × 10<19> cm^<-3>. The Be transport for the conventional (100) orientation increases rapidly with the increase of growth temperature (T_s) from 530℃ to 630℃. With substrate misorientation from (100) toward (111)A, however, Be transport is decreased at T_s = 630℃, and reaches a minimum with (311)A orientation. The maximum current gain of AlGaAs/GaAs HBTs grown at T_s = 560℃ is 264 for (411)A orientation and 3 for (100) orientation, which confirms the applicability of substrate orientations other than the conventional (100) one for obtaining a sharp Be profile.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• GOTO Shigeo

  Central Research Laboratory, Hitachi Ltd.

• Goto S

  Central Research Laboratory Hitachi Ltd.

• MOCHIZUKI Kazuhiro

  Central Research Laboratory, Hitachi Ltd.

• Kusano Chuushiro

  Central Research Laboratory, Hitachi Ltd.

• Mochizuki K

  Central Research Laboratory Hitachi Ltd.

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• Kusano C

  Central Research Laboratory Hitachi Ltd.

• Mishima T

  Central Research Laboratory Hitachi Ltd.

• Mishima Tomoyoshi

  Central Research Lab. Hitachi Ltd.

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