Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
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概要
- 論文の詳細を見る
A unique droplet behavior has been observed during the molecular beam epitaxial growth of AlAs on GaAs (111)B surfaces with an alternating source supply by in situ scanning microprobe reflection high-energy electron diffraction (μ-RHEED) in real time. It has been found that the intermixing of Al and Ga atoms strongly affects droplet formation during the initial four cycles of the growth. The droplet density increases and its size decreases as the growth cycle proceeds, and after the 5th growth cycle, the density and size are almost constant. The surface diffusion lengths of excess group-III atoms in the 1st and 5th cycles are estimated to be about 55 and 3.3 μm, agreeing with those obtained in the homoepitaxial cases of GaAs and AlAs, respectively.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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Nomura Yoshinori
Central Research Laboratory Mitsubishi Electric Corporation
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Morishita Yoshitaka
Optoelectronics Technology Research Laboratory
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GOTO Shigeo
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
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Goto S
Central Research Laboratory Hitachi Ltd.
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Katayama Y
Murata Manufacturing Co. Ltd.
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TSU Toshiro
Central Research Laboratory, Mitsubishi Electric Corporation
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Tsu Toshiro
Central Research Laboratory Mitsubishi Electric Corporation
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