Surface Cleaning of Si-Doped/Undoped GaAs Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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Yamada M
Ibaraki Univ. Ibaraki Jpn
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Yamada M
Process Development Division Fujitsu Ltd.
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Yamada Masamichi
Optoelectronics Technology Research Laboratory
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Yamada M
Sony Corp. Tokyo Jpn
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GOTO Shigeo
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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Yamada Masamichi
Optoelectronic's Technology Research Laboratory (otl)
関連論文
- Panel-Type Semiconductor Optical Modulator Using Electron Depleting Absorption Control
- Annealing out of Thermal Process-Induced Defects at InP(110) Surfaces-A Novel Method
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
- Surface Cleaning of Si-Doped/Undoped GaAs Substrates
- Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
- Influence of Electrode Contacts on Leakage Current of SrTiO_3 Capacitors
- RuO_2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials
- Calculation of Characteristic X-rays in Diagnostic X-ray Spectrum
- Characterization of GaAs-(001) Surface Photo-Oxide Formed by Visible-Light Irradiation
- Effect of Electron Energy Distribution on Bremsstrahlung Spectrum
- Porous β-SiC Fabrication by Electrochemical Anodization
- Blueshifts in the Photoluminescence of Porous Si by Immersion in Deionized Water
- Comparison of Photoluminescence Lifetimes between As-Prepared and Dry-Oxidized Porous Si
- Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption
- Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Speetroscopy
- Sm-Co-Cu-Fe-Ti Magnets
- Direct Observation of Species Liberated from GaAs Native Oxides during Atomic Hydrogen Cleaning
- Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
- Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
- Large Capacity and High-Data-Rate Phase-Change Disks
- Analysis of GaAs MOMBE Reactions by Mass Spectrometry
- GaOH : Unstable Species Liberated from GaAs Surface Oxides during Atomic Hydrogen Cleaning
- Low-Temperature Surface Cleaning of GaAs Using Trisdimethylaminoarsine
- Effect of Hydrogen Radicals on the Reduction of Carbon Incorporation into GaAs Grown by Using Trimethylgallium
- Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
- Effects of Electron Beam Irradiation and Subsequent Cl_2 Exposure on Photo-Oxidized c(4×4) GaAs : Mechanism of In Situ EB Lithographic Patterning
- Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication
- Selective Area Epitaxial Growth of GaAs Using Metal Gallium and Trisdimethylaminoarsine
- Etching of Al_xGa_As (0≤x≤1) by Trisdimethylaminoarsine