Etching of Al_xGa_<1-x>As (0≤x≤1) by Trisdimethylaminoarsine
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概要
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The etching of Al_xGa_<1-x>As by trisdimethylaminoarsine (TDMAAs) in an ultra-high-vacuum chamber of molecular-beam epitaxy (MBE) was investigated in relation to the Al composition (x) dependence. The etching rate (R_e) of Al_xGa_<1-x>As rapidly decreased along with an increase in x, reaching almost zero at x=1. At a substrate temperature of 600℃, where the R_e for GaAs was 0.33 monolayer(ML)/s, the R_e of Al_xGa_<1-x>As with x above 0.06 was one order of magnitude smaller than that for GaAs. In situ Auger electron spectroscopy revealed that the surfaces of AlGaAs exposed to TDMAAs changed to Al-rich surfaces, showing that the Al-rich layer formed as a result of the selective desorption of Ga atoms from the AlGaAs surface terminated the progression of etching.
- 社団法人応用物理学会の論文
- 1995-05-01
著者
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Morishita Yoshitaka
Optoelectronics Technology Research Laboratory
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GOTO Shigeo
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
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MORISHITA Yoshitaka
Optoelectronics Technology Research Laboratory:(Present address)Division of Electronics and Information Science, Faculty of Technology, Tokyo University of Agriculture and Technology
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- Effect of Hydrogen Radicals on the Reduction of Carbon Incorporation into GaAs Grown by Using Trimethylgallium
- Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
- Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication
- Selective Area Epitaxial Growth of GaAs Using Metal Gallium and Trisdimethylaminoarsine
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