Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication
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概要
- 論文の詳細を見る
We report on the growth of GaAs/AlAs layers by molecular beam epitaxy on GaAs (100) substrates patterned with mesa stripes oriented along the [001] direction. The GaAs growth led to the formation of {110} facets which were smoother than the facets formed on [01^^-1] and [01^^-1^^-]-oriented mesa stripes. It was also found that the GaAs growth rate on the {110} facets is extremely low. We fabricated quantum wire-like structures by narrowing the width of the mesa-top (100) facet, which is limited by the (11^^-0) and (110) facets, to the nanometer scale, and then growing an AlAs/GaAs quantum well. The resulting structure was as narrow as 〜30 nm with a thickness of 〜30 nm at its center.
- 社団法人応用物理学会の論文
- 1993-08-01
著者
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Ishikawa Tomonori
Optoelectronics Technology Research Laboratory
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Lopez Maximo
Optoelectronics Technology Research Laboratory
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NOMURA Yasuhiko
Optoelectronics Technology Research Laboratory
関連論文
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- Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
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- Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
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- Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
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