Analysis of GaAs MOMBE Reactions by Mass Spectrometry
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概要
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The thermal decomposition of trimethylgallium (TMG) under metal-organic molecular beam epitaxy (MOMBE) conditions is studied by mass spectrometry. For the first time, it is observed that the amount of Ga-containing species desorbed from the GaAs surface decreases above 350℃. Measurements on CH_3, CH_4 and C_2H_6 indicate that TMG pyrolyzes by releasing methyl radicals. The amount of Ga-containing species desorbed from the SiO_2 surface does not show a steep decrease up to 530℃, which indicates that no thermal decomposition occurs on SiO_2. This explains the mechanism of selective epitaxy in MOMBE.
- 社団法人応用物理学会の論文
- 1989-09-20
著者
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Yamada Masamichi
Optoelectronics Technology Research Laboratory
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Ohki Yoshimasa
Optoelectronics Technology Research Laboratory
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HIRATANI Yuji
Optoelectronics Technology Research Laboratory
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Yamada Masamichi
Optoelectronic's Technology Research Laboratory (otl)
関連論文
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- Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
- Characterization of GaAs-(001) Surface Photo-Oxide Formed by Visible-Light Irradiation
- Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption
- Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Speetroscopy
- Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
- Direct Observation of Species Liberated from GaAs Native Oxides during Atomic Hydrogen Cleaning
- Analysis of GaAs MOMBE Reactions by Mass Spectrometry
- GaOH : Unstable Species Liberated from GaAs Surface Oxides during Atomic Hydrogen Cleaning
- Effects of Electron Beam Irradiation and Subsequent Cl_2 Exposure on Photo-Oxidized c(4×4) GaAs : Mechanism of In Situ EB Lithographic Patterning
- Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry