Characterization of GaAs-(001) Surface Photo-Oxide Formed by Visible-Light Irradiation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-15
著者
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Yamada M
Ibaraki Univ. Ibaraki Jpn
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Yamada M
Process Development Division Fujitsu Ltd.
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Yamada Masamichi
Optoelectronics Technology Research Laboratory
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Yamada M
Sony Corp. Tokyo Jpn
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TONE Kiyoshi
Optoelectronics Technology Research Laboratory
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IDE Yuichi
Optoelectronics Technology Research Laboratory
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Ide Y
Research And Development Center Ricoh Company Ltd.
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Ide Yuichi
Optoelectronic's Technology Research Laboratory (otl)
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Tone K
Optoelectronics Technology Research Laboratory:(present Address)tsukuba Research Laboratory Nippon S
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Yamada Masamichi
Optoelectronic's Technology Research Laboratory (otl)
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