GaOH : Unstable Species Liberated from GaAs Surface Oxides during Atomic Hydrogen Cleaning

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概要

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• A mass spectroscopic study was carried out on atomic hydrogen (H・) cleaning of GaAs substrates. During the H・ -induced removal of surface Ga oxides at 410℃, a desorption of GaOH was observed along with a weak desorption of Ga_2O. Upon interrupting the H・ generation, the GaOH desorption stopped immediately, whereas the Ga_2O desorption continued, indicating that the surface GaOH has a short lifetime. Considering the fact that bulk GaOH is unstable and has not yet been isolated, it is noteworthy that GaOH is a major desorption product of the reaction between H・ and Ga oxides.

• 社団法人応用物理学会の論文
• 1996-05-15

著者

• Yamada Masamichi

  Optoelectronics Technology Research Laboratory

• Yamada Masamichi

  Optoelectronics Technology Research Laboratory (otl)

• Yamada Masamichi

  Optoelectronic's Technology Research Laboratory (otl)

関連論文

• Surface Cleaning of Si-Doped/Undoped GaAs Substrates
• Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
• Characterization of GaAs-(001) Surface Photo-Oxide Formed by Visible-Light Irradiation
• Effect of Atomic Hydrogen on GaAs (001) Surface Oxide Studied by Temperature-Programmed Desorption
• Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Speetroscopy
• Direct Observation of Species Liberated from GaAs Native Oxides during Atomic Hydrogen Cleaning
• Analysis of GaAs MOMBE Reactions by Mass Spectrometry
• GaOH : Unstable Species Liberated from GaAs Surface Oxides during Atomic Hydrogen Cleaning
• Effects of Electron Beam Irradiation and Subsequent Cl_2 Exposure on Photo-Oxidized c(4×4) GaAs : Mechanism of In Situ EB Lithographic Patterning

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