Correction of Energy Shifts to Form Real Three-Dimensional Images by Microprobe RBS

スポンサーリンク

概要

• 論文の詳細を見る

• Data processing for three-dimensional analysis by microprobe Rutherford backscattering (RBS) was studied to form real images of multilayered structures. Bilayered Au stripes on Si were analyzed by a 400 keV He^+ microprobe. Unprocessed mapping and tomographic images of the inner Au layer showed wavy shapes due to the energy loss of probe beams in the outer Au layer. A set of 8192 RBS-spectra corresponding to a measured frame of 128 × 64 points was processed by evaluating amounts of Au and the energy loss in the outer Au layer. The inner Au images were successfully corrected after the processing.

• 社団法人応用物理学会の論文
• 1992-11-15

著者

• Katayama Y

  Murata Manufacturing Co. Ltd.

• Takai Mikio

  Faculty Of Engineering Science And Research Center For Extreme Materials (rcem) Osaka University

• Takai Mikio

  Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University

• Kinomura Atsushi

  Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University:(present A

• KATAYAMA Yoshitomo

  Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University

関連論文

• Atomic Sites of S on (NH_4)_2S_x-Treated GaAs(100) Surface
• Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
• Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
• Soft-Error Study of DRAMs with Retrograde Well Structure by New Evaluation Method (Special Issue on Quarter Micron Si Device and Process Technologies)
• Charge Collection Control Using Retrograde Well Tested by Proton Microprobe Irradiation
• New Method for Soft-Error Mapping in Dynamic Random Access Memory Using Nuclear Microprobe
• Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe
• Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
• Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
• Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams : Beam-Induced Physics and Chemistry
• Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
• Local Control of Magnetic Property in Stainless Steel Surface by Ion and Laser Beams
• Etching Rate Control by MeV O^+ Implantation for Laser-Chemical Reaction of Ferrite
• Laser-Induced Etching of Mn-Zn ferrite and Its Application : Etching and Deposition Technology
• Fabrication and Characterization of (Sr, Ba)Nb_2O_6 Thin Films by Pulsed Laser Deposition
• Ba_Sr_TiO_3 Thin Film Production on Atomically Flat SrTiO_3(100)Substrates by a Pulsed Laser Deposition and Dielectric properties
• Influence of Beam Current Ripple on Secondary Electron and RBS Mapping Images
• New Nonvolatile Analog Memories for Analog Data Processing
• New Nonvolatile Analog Memories for Building Associative Memories
• Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
• Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
• A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
• The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
• Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
• Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films
• Damage during Microchanneling Analysis Using 400 keV Helium Ion Microprobe
• Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etchingin CCl_4 Atmosphere
• Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl_4 Atmosphere
• Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl_4 Gas Atmosphere
• Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere
• Increase in T_c of Nb Films Implanted with N^+_2
• Control of T_c for Niobium by N Ion Implantation
• Residual Strain in Single Crystalline Germanium Islands on Insulator
• Thickness Dependence of SiO_2 Capping Layers on Recrystallization of Germanium Islands on Insulator
• Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator
• Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization
• Effect of Hydrogen Radicals on the Reduction of Carbon Incorporation into GaAs Grown by Using Trimethylgallium
• Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
• Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
• Correction of Energy Shifts to Form Real Three-Dimensional Images by Microprobe RBS
• Design of a 200 kV Focused Ion Beam Surface Analysis System
• Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching
• Microanalysis by Focused MeV Helium Ion Beam
• Change in Scanning Tunneling Microscope (STM) Tip Shape during Nanofabrication
• Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation
• Photolytic Etching of Polycrystalline Silicon in SF_6 Atmosphere
• Pulse Laser Annealing Effects in Si-Implanted GaAs
• Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation
• Laser-Induced Etching of Mn–Zn Ferrite and Its Application

もっと見る 閉じる

スポンサーリンク