Observation of Ga_<0.47>In<0.53>As/InP Multiquantum Well Structure in Air by Scanning Tunneling Microscope : Surfaces, Interfaces and Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-07-20
著者
-
Kato Takayoshi
Reseach Institute Of Electronics Shizuoka University
-
Kato T
Graduate School Of Engineering Nagoya University
-
Koshikawa Takanori
Fundamental Electronics Research Institute Academic Frontier Promotion Center Osaka Electro-communic
-
TANAKA Ichiro
Optoelectronics Technology Research Laboratory (OTL)
-
Kato T
Ashikaga Inst. Technol. Tochigi
-
Kato T
Optoelectronics Technology Research Lab. Ibaraki
-
Osaka Fukunobu
Optoelectronics Technology Research Laboratory
-
Osaka Fukunobu
Fujitsu Laboratories Ltd.
-
KATAYAMA Yoshifumi
Optoelectronics Technology Research Laboratory
-
Tanaka I
Department Of Materials Science And Engineering Kyoto University
-
Tanaka I
Univ. Tokyo Tokyo Jpn
-
Kondo T
Graduate School Of Science Nagoya University
-
KATO Takashi
Optoelectronics Technology Research Laboratory
-
Osaka F
Optoelectronics Technology Research Lab. Ibaraki
-
Osaka F
Optoelectronics Technology Research Laboratory
-
Kato Takashi
Optoelectronics Sumiden Laboratory Rwcp C/o Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
関連論文
- Super-High Brightness and High-Spin-Polarization Photocathode
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
- Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
- Effects of Oxygen Vacancy Diffusion on Leakage Characteristics of Pt/(Ba_Sr_)TiO_3/Pt Capacitor
- Liquid Phase Epitaxy of InGaP on GaAs (100) Substrates at Low Growth Temperatures down to 630℃
- ANALYSIS OF THE GENES ENCODING PLASMA MEMBRANE AQUAPORINS IN CARROT (DAUCUS CAROTA) SOMATIC AND ZYGOTIC EMBRYOGENESIS
- Room Temperature InAs_xP_Sb_y/InAs Photodetectors with High Quantum Efficiency
- Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
- Adiabatic Compressibility of Aqueous Solutions of Amphiphiles with an Ammonium Group as the Hydrophilic Domain
- Molecular Arrangement at Cleaved Single-Crystal Surface of Steraric Acid Observed by Atomic Force Microscope
- Diamond Deposition and Behavior of Atomic Carbon Species in a Low-Pressure Inductively Coupled Plasma
- Behaviors of carbon atom density in hydrocarbon and fluorocarbon plasmas
- Measurement of Einstein's A Coefficient of the 296.7 nm Transition Line of the Carbon Atom
- Ultrasonic and NQR Studies of Structural Phase Transitions and Superconductivity in La_(Ba, Sr)_xCuO_4 : II-C Neutron Scattering, NMR and NQR and Ultrasonics : II Oxide Superconductors; Experiments II : Electronic States
- Influence of Sulphidation Treatment on the Performance of Mid-Infrared InAsPSb/InAs Detectors
- Time and Energy Responses of Liquid-Xenon Scintillation Chamber for ^Ne Ion Beam at 135A MeV
- Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_In_xAs_yP_ Alloy System
- Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation
- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
- Studies on Spread Monolayers and LB Films of Long-Chain Alkylchlorosilanes by Brewster Angle Microscopy and X-Ray Photoelectron Spectroscopy
- Development of a Precisely Temperature-Programmable Langmuir Trough for Measuring Properties of Insoluble Monolayers at the Water Surface as Functions of Temperature
- Hydrogen Formation during Wet Grinding of Alumina and Silicon Carbide
- Spin Relaxation of Electrons in Strained-GaAs-Layer Photocathode of Polarized Electron Source
- Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates
- Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Speetroscopy
- Isolation and Characterization of Six Abscisic Acid-Inducible Genes from Carrot Somatic Embryos
- 16×16 Two-Dimensional Optoelectronic Integrated Receiver Array for Highly Parallel Interprocessor Networks
- New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
- Optical Properties of (InAs)_1/(GaAs)_m Strained-Layer Superlattices
- Interference Effects on Photoreflectance Line Shapes of Excitons in GaAs/AlAs Superlattices
- Photoluminescence Properties of GaAs / AlAs Short-Period Superlattices
- Electronic Transport Properties of ZrTiO_4 at High Temperature ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Ultrasonic Studies of a Single Crystalline La_Sr_CuO_4 in High Magnetic Fields(Transport and Fermiology)
- Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
- Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
- Enhancement of Critical Magnetization Current by the Electron Irradiation in Ba_2YCu_3O_7 Superconductor
- Enhanced Critical Magnetization Currents due to Electron Irradiation in High-T_c Oxide Superconductors
- Real Time Magnetic Imaging by Spin-Polarized Low Energy Electron Microscopy with Highly Spin-Polarized and High Brightness Electron Gun
- High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
- Spin-Dependent Luminescence of Highly Polarized Electrons Generated by Two-Photon Absorption in Semiconductors : Optical Properties of Condensed Matter
- Spin Relaxation of Electrons in Graded Doping Strained GaAs-Layer Photocathode of Polarized Electron Source
- Spin Dependent Luminescence of GaAs Thin Layers under Tensile Strain and Compressive Strain Induced by Interface ess
- Circular Polarization of Photoluminescence Excitation Spectra of Strained GaAs Layer
- Electron Beam Direct Writing Techniques for the Development of Sub-Quarter-Micron Devices
- Application of Proximity Effect Correction Usirng Pattern-Area Density to Patterning on a Heavy-Metal Substrate and the Cell-Projection Exposure
- A Low-Temperature X-Ray Diffraction Study of Structural Phase Transition in La_Sr_CuO_4
- Estimation of Grown Layer Thickness by Cathodoluminescence Measurement
- High-T_c(Bi, Pb)_2Sr_2Ca_2Cu_3O_ Superconducting Magnet Operated Using 20 K Gifford-McMahon-Type Refrigerator
- Microstructures and J_c-B Characteristics of Ag-Sheathed Bi-Based Superconducting Wires
- Current Imaging Tunneling Spectroscopy of Thin n-GaAs/p-GaAs Multilayer Structures in Air
- An ESR Study of YBa_2Cu_3O_ and Y_2BaCuO_5 with Oxygen Deficiencies : Electrical Properties of Condensed Matter
- Preparation of the High-T_c Superconducting Phase in Bi, Pb-Sr-Ca-Cu-O films by Pyrolysis of 2-Ethylhexanoates : Electrical Properties of Condensed Matter
- Observation of Ga_InAs/InP Multiquantum Well Structure in Air by Scanning Tunneling Microscope : Surfaces, Interfaces and Films
- Formation of High-T_c Superconducting BiSrCaCu_2O_x Films on ZrO_2/Si(100) : Electrical Properties of Condensed Matter
- preparation of BiSrCaCu_2O_x Films with T_c>77 K by Pyrolysis of Organic Acid Salts : Electrical Properties of Condensed Matter
- Real-Time Observations of Appearance of Crosshatched Pattern during Molecular Beam Epitaxy of Compressive InGaAs on InP
- Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
- A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Desorption of the Excess Gallium Atoms at the Surface of Gallium Arsenide and Application to Atomic Layer Epitaxy
- Real-Time Observation of GaAs (001) Surfaces During Molecular Beam Epitaxy by Scanning Microprobe Reflection High Energy Electron Diffraction : Surfaces, Interfaces and Films
- Shape of the GaInAs/InP Multiquantum Well Potential Observed by Scanning Tunneling Microscopy
- Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
- Homogeneity of Single Crystal of High-T_c Superconductor La_Sr_xCuO_4
- Characterization of Single Crystals of High-T_c Superconductor La_Sr_xCuO_4
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Effect of Hydrogen Radicals on the Reduction of Carbon Incorporation into GaAs Grown by Using Trimethylgallium
- Observations of Anomalous Droplet Formation during the Molecular Beam Epitaxy of AlAs on GaAs (111)B Surfaces with an Alternating Source Supply
- Enhancement of Quantum-Confined Stark Effect in GaAs-AlGaAs Quantum Wells by Quantization along the [111] Axis
- Comparison of Energy-Loss Functions from Reflection Electron Energy-Loss Spectroscopy Spectra with Surface and Bulk Energy-Loss Functions: in Case of Cu
- GaAs Heteroepitaxial Growth on an InP (001) Substrate
- Selective Area Epitaxial Growth of GaAs Using Metal Gallium and Trisdimethylaminoarsine
- Macroscopic Single-Domain Graphene Growth on Polycrystalline Nickel Surface
- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces