Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces
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概要
- 論文の詳細を見る
GaAs (001) vicinal surfaces which were tilted 2 degrees toward the [010] direction were observed with a scanning tunneling microscope equipped with a molecular beam epitaxy facility. The surface of 30 monolayers of GaAs grown on a substrate consisted of both large flat and narrow terraces. On the other hand, the surface of a 1.5-μm-thick GaAs layer grown on a substrate consisted of relatively uniform-width terraces which reflected the off-angle. However, their terrace edges showed a large atomic-scale fluctuation.
- 社団法人応用物理学会の論文
- 1991-10-15
著者
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TANAKA Ichiro
Optoelectronics Technology Research Laboratory (OTL)
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Ohkouchi Shunsuke
Optoelectronics Technology Research Laboratory
関連論文
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- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Current Imaging Tunneling Spectroscopy of Thin n-GaAs/p-GaAs Multilayer Structures in Air
- Observation of Ga_InAs/InP Multiquantum Well Structure in Air by Scanning Tunneling Microscope : Surfaces, Interfaces and Films
- Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
- Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
- Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
- Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
- GaAs Heteroepitaxial Growth on an InP (001) Substrate
- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces