Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
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概要
- 論文の詳細を見る
The island-formation processes of GaAs heteroepitaxial growth on InP (lattice constant (a) is 3.7% larger than that of GaAs) and InAs (a is 7.2% larger than that of GaAs) surfaces were investigated using a scanning tunneling microscope (STM) multichamber system equipped with a molecular beam epitaxy facility. In the case of GaAs/InP heteroepitaxial growth, two-dimensional (2D) growth was observed when less than 2.0 monolayers (MLs) of GaAs were deposited on the InP surfaces. On the other hand, three-dimensional (3D) growth was confirmed for more than 2.0 ML GaAs deposition. In the case of GaAs/InAs heteroepitaxial growth, the same transition from 2D to 3D island growth occurred when more than 0.75 ML of GaAs was deposited.
- 社団法人応用物理学会の論文
- 1994-03-15
著者
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TANAKA Ichiro
Optoelectronics Technology Research Laboratory (OTL)
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OHKOUCHI Shunsuke
Optoelectronics Technology Research Laboratory (OTL)
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IKOMA Nobuyuki
Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Ikoma N
Sumitomo Electric Ind. Ltd. Yokohama Jpn
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Ikoma Nobuyuki
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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Ohkouchi Shunsuke
Optoelectronics Technology Research Laboratory
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Tanaka Ichiro
Optoelectronics Technology Research Laboratory (otl):(present Address)tsukuba Research Laboratory Ni
関連論文
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- Current Imaging Tunneling Spectroscopy of Thin n-GaAs/p-GaAs Multilayer Structures in Air
- Observation of Ga_InAs/InP Multiquantum Well Structure in Air by Scanning Tunneling Microscope : Surfaces, Interfaces and Films
- Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition
- Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
- Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
- Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
- Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
- GaAs Heteroepitaxial Growth on an InP (001) Substrate
- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces