InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface

概要

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InAs island formation on a GaAs(001) substrate misoriented by 1°toward the [110] direction was investigated by scanning tunneling microscopy. On a 2.0ML InAs-deposited GaAs surface, three-dimensional islands were observed; some of the islands were aligned along the [11^^-0] direction. That is, the islands were selectively formed at steps running relatively straight along the [11^^-0] direction on the GaAs surface. These results show the possibility of controlling the arrangement of InAs islands on a surface by controlling the step structure on the surface, which induces selective island formation at the steps.
社団法人応用物理学会の論文
1995-06-15