Shape Transition of GaAs Islands Grown on InAs (001) Surfaces

スポンサーリンク

概要

• 論文の詳細を見る

• We have observed the shape transition of three-dimensional (3D) GaAs islands grown on InAs (001) surfaces with increasing the GaAs deposition. A scanning tunneling microscopy image of a 1.0 monolayer (ML) GaAs-deposited on InAs surface showed 3D island formation with an island size of about 10 nm×20〜30 nm, extending in the [110] direction. When 2.0 ML GaAs was deposited onto the InAs surface, this island shape changed to a compact, pyramid-like one. At this stage, smaller islands were formed on the InAs substrate surface, which was reconstructed to be an In-stabilized (4×2) structure. These islands coalesced and grew larger on the InAs substrate surface with increasing the amount of GaAs deposition.

• 社団法人応用物理学会の論文
• 1994-03-15

著者

• OHKOUCHI Shunsuke

  Optoelectronics Technology Research Laboratory (OTL)

• IKOMA Nobuyuki

  Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd.

• Ikoma Nobuyuki

  Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.

• Ohkouchi Shunsuke

  Optoelectronics Technology Research Laboratory

関連論文

• Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
• Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
• Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)
• Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition
• Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
• Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
• Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
• Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
• Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
• Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
• InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
• GaAs Heteroepitaxial Growth on an InP (001) Substrate
• Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces

もっと見る 閉じる

スポンサーリンク