Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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Murata Michio
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Murata Michio
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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IKOMA Nobuyuki
Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd.
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KATSUYAMA Tsukuru
Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Ikoma Nobuyuki
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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HASHIMOTO Jun-ichi
Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.
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FUKUI Jiro
Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.
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NOMAGUCHI Toshio
Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.
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Katsuyama Tsukuru
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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Fukui Jiro
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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Nomaguchi Toshio
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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Hashimoto Jun-ichi
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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Ikoma Nobuyuki
Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.
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Katsuyama Tsukuru
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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KATSUYAMA Tsukuru
Optoelectronics R&D Laboratories, Sumitomo Electric Industries Ltd.
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Hashimoto Jun-ichi
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
関連論文
- Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)
- Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition
- Low-Damage Indium Phosphide Sidewall Formation by Reactive Ion Etching
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
- Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
- Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
- Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
- 1.3 μm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers
- Closely Spaced Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells
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