Low-Damage Indium Phosphide Sidewall Formation by Reactive Ion Etching
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-02-28
著者
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Saga Nobuhiro
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Kishi Takeshi
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Murata Michio
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Murata Michio
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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KATSUYAMA Tsukuru
Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Katsuyama Tsukuru
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Katsuyama Tsukuru
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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MASUDA Takeyoshi
Optoelectronics R&D Laboratories. Sumitomo Electric Industries, Ltd
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YAMAGUCHI Akira
Optoelectronics R&D Laboratories. Sumitomo Electric Industries, Ltd
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Masuda Takeyoshi
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Yamaguchi Akira
Optoelectronics R&d Laboratories. Sumitomo Electric Industries Ltd
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Katsuyama Tsukuru
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
関連論文
- Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)
- Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition
- Low-Damage Indium Phosphide Sidewall Formation by Reactive Ion Etching
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