1.3 μm GaInNAs Bandgap Difference Confinement Semiconductor Optical Amplifiers
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概要
- 論文の詳細を見る
A GaInNAs bandgap difference confinement (BDC) semiconductor optical amplifier (SOA) utilizing a bandgap difference between an active region and a cladding region for current confinement was developed for the first time. Due to strong current and optical confinements in the lateral direction, this SOA exhibited a 4.3 dB larger chip gain and 2.1 dB smaller fiber coupling loss than the conventional GaInNAs-buried-ridge-stripe (BRS) SOA. In addition, the gain dependence of the GaInNAs-BDC-SOA on temperature was found to be much smaller than that of the conventional InP-based-SOA, and comparable to that of the GaInNAs-BRS-SOA.
- 2006-03-15
著者
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TSUJI Yukihiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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Fujii Kousuke
Transmission Device Laboratory, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Katsuyama Tsukuru
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Hashimoto Jun-ichi
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Koyama Kenji
Optoelectronic Industry and Technology Development Association (OITDA), 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ishida Akira
Optoelectronic Industry and Technology Development Association (OITDA), 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Yamazaki Koichiro
Transmission Device Laboratory, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Koyama Kenji
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Tsuji Yukihiro
Transmission Device Laboratory, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Ishida Akira
Optoelectronic Industry and Technology Development Association (OITDA), 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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