A17 Influence of Nanoimprinting Pressure on Mechanical Damage in Compound Semiconductor Substrate Used for Laser Diode(M4 processes and micro-manufacturing for science)
スポンサーリンク
概要
- 論文の詳細を見る
When nanoimprint lithography (NIL) is used for compound semiconductor, mechanical damage caused by imprinting pressure is a critical issue in view of device characteristics and its reliability. We demonstrate that no evident damage have been caused by imprinting in our process by using photoluminescence method and simulations. We also indicate that fabricated laser diodes show comparable characteristics and reliability with those fabricated by conventional electron-beam lithography process. NIL is substantially applicable to fabrication of compound semiconductor devices such as laser diodes.
- 2009-12-01
著者
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Taniguchi Jun
Faculty Of Industrial Science And Technology Tokyo University Of Science
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YANAGISAWA Masaki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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TSUJI Yukihiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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YOSHINAGA Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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HIRATSUKA Kenji
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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Hiratsuka Kenji
Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.
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Tsuji Yukihiro
Transmission Device Laboratory, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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YANAGISAWA Masaki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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YOSHINAGA Hiroyuki
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD.
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