Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
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概要
- 論文の詳細を見る
Step structures of InAs (001) vicinal surfaces tilted by 1° towards the [110] direction were investigated using scanning tunneling microscopy. A transition from an As-stabilized (2×4) to an Instabilized (4×2) reconstruction caused a change in the step structure of the vicinal surfaces from ragged to straight along the [110] direction with the incorporation of step bunching. The straight shape of the step structure seems to be caused by desorption of arsenic atoms along the [110] direction.
- 社団法人応用物理学会の論文
- 1994-12-01
著者
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OHKOUCHI Shunsuke
Optoelectronics Technology Research Laboratory (OTL)
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IKOMA Nobuyuki
Optoelectronics R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Ikoma Nobuyuki
Optoelectronics R&d Laboratories Sumitomo Electric Industries Ltd.
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Ohkouchi Shunsuke
Optoelectronics Technology Research Laboratory
関連論文
- Step Structures and Terrace Width Ordering of Molecular Beam Epitaxially Grown GaAs Surfaces Observed by Scanning Tunneling Microscopy
- Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
- Metalorganic Vapor Phase Epitaxial Growth of GaNAs Using Tertiarybutylarsine (TBA) and Dimethylhydrazine (DMHy)
- Surface Treatment by Ar Plasma Irradiation in Electron Cyclotron Resonance Chemical Vapor Deposition
- Multi-chamber Ultrahigh Vacuum Scanning Tunneling Microscope System for Investigating Processed GaAs Surfaces and Observation of Argon-Ion-Bombarded GaAs Surfaces
- Scanning Tunneling Microscopy of Initial Stages of GaAs Heteroepitaxy on Lattice-Mismatched Substrates
- Role of Steps in GaAs Heteroepitaxial Growth on InAs(001) Surfaces
- Step Structures on Vicinal InAs (001) under (2×4) and (4×2) Surface Reconstructions
- Straight Step Edge Formation on an InAs(001) Vicinal Surface by the Transition of Surface Reconstruction
- Shape Transition of GaAs Islands Grown on InAs (001) Surfaces
- InAs Island Formation Aligned along the Steps on a GaAs(001) Vicinal Surface
- GaAs Heteroepitaxial Growth on an InP (001) Substrate
- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs Surfaces