On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs
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概要
- 論文の詳細を見る
The popular distributed model for metal-semiconductor ohmic contacts is extended to take into account the nonplanar nature of alloyed contacts. AuGe/Ni ohmic contacts are fabricated on n-GaAs epitaxial layers (3×10^<18> cm^<-3>, 160 nm) with an undoped cap layer of varied thickness. Thus the specific contact resistance and the so-called alloyed depth are determined from the measured contact resistances. Typical values are, respectively, 10^<-7> Ω・cm^2 and 250 nm.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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USAGAWA Toshiyuki
Superconductivity Research Laboratory, ISTEC
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GOTO Shigeo
Central Research Laboratory, Hitachi Ltd.
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KAWATA Masahiko
Central Research Laboratory, Hitachi Ltd.
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Kawata Masahiko
Central Research Laboratory Hitachi Ltd.
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Kawata Masahiko
Central Research Lab.hitachi Ltd.
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Kawata Masahiko
Central Research Loboratory Hitachi Ltd.
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Utagawa T
Superconductivity Research Laboratory Istec
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Utagawa Tadashi
Superconductivity Research Laboratory International Superconductivity Technology Center
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Usagawa Toshiyuki
Central Research Laboratory Hitachi Ltd.
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Usagawa Toshiyuki
Central Research Loboratory Hitachi Ltd.
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RABINZOHN Patrick
Central Research Loboratory, Hitachi Ltd.
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KOBAYASHI Masayoshi
Central Research Loboratory, Hitachi Ltd.
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Rabinzohn Patrick
Central Research Loboratory Hitachi Ltd.:philips Research Organization L. E. P.
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Goto Shigeo
Central Research Loboratory Hitachi Ltd.
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Kobayashi Masayoshi
Central Research Loboratory Hitachi Ltd.
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