Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates

スポンサーリンク

概要

著者

関連論文

Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
Low-Lattice-Strain Long-Wavelength GaAsSb/GaInAs Type-II Quantum Wells Grown on GaAs Substrates
Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In_Al_As/In_Ga_As/InAsP High-Electron-Mobility Structures on GaAs Substrates
Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
Morphological Evolution of the InGaN-Based Quantum Well Surface due to a Reduced Density of Threading Dislocations in the Underlying GaN through Higher Growth Pressure
InAsSb Quantum Dots Grown on GaAs Substrates by Molecular Beam Epitaxy
InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
Ultrashallow Junction Formation for Sub-100nm Complementary Metal-Oxide-Semiconductor Field-Effect Transistor by Controlling Transient Enhanced Diffusion
Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond
Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
Fabrication of InAlAs/InGaAs High-Electron-Mobility Transistors Using ArF-Excimer-Laser-Assisted Damage-Free Highly Selective InGaAs/InAlAs Etching
1.45 μm Intersubband Absorption in InGaAs/AlAsSb Grown by Molecular Beam Epitaxy
Improved Electron Mobility of AlInSb/InAsSb/AlInSb Heterostructures Grown Lattice-Mismatched on GaAs Substrates
Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
Applying a Mode Selector to Improve the Pulse-Compression Performance of Asymmetric-Coupled-Waveguide-Based Dispersion Compensators
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
Light Modulation by Polariton Directional-Coupler-Type Devices (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
Modulation-Doped Multi-Quantum Well (MD-MQW) Lasers. : II. Experiment
High Breakdown Voltage InAlAs/InGaAs High Electron Mobility Transistors on GaAs with Wide Recess Structure
Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
Electron Beam Brightness from Negative-Electron-Affinity Photocathodes for Scanning Electron Microscopy Application
Increased Hole Mobility of p-GaSb/GaAs Short-Period Superlattices Grown on InP Substrates
Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing

もっと見る

スポンサーリンク