InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-03-30

著者

• KUDO Makoto

  Central Research Laboratory, Hitachi, Ltd.

• Kudo M

  Hitachi Ltd. Tokyo Jpn

• HIGUCHI Katsuhiko

  Central Research Laboratory, Hitachi, Ltd.

• HIGUCHI Koichi

  Department of Applied Chemistry, Faculty of Engineering, Gunma University

• Kudo M

  Seikei Univ. Tokyo Jpn

• Kudo Makoto

  Central Research Lab. Hitachi Ltd.

• MISHIMA Tomoyoshi

  Central Research Laboratory, Hitachi, Ltd.

• UCHIYAMA Hiroyuki

  Central Research Lab., Hitachi, Ltd.

• SHIOTA Takashi

  Central Research Lab., Hitachi, Ltd.

• Uchiyama Hiroyuki

  Central Research Lab. Hitachi Ltd.

• Uchiyama Hiroyuki

  Central Research Laboratory Hitachi Ltd.

• Uchiyama H

  International Superconductivity Technol. Center Tokyo Jpn

• Kudo Masahiro

  Institute Of Industrial Science University Of Tokyo

• Shiota Takashi

  Central Research Lab. Hitachi Ltd.

• Higuchi K

  Department Of Applied Chemistry Faculty Of Engineering Gunma University

• Higuchi Katsuhiko

  Central Research Lab. Hitachi Ltd.

• Mishima T

  Central Research Laboratory Hitachi Ltd.

• Mishima Tomoyoshi

  Central Research Lab. Hitachi Ltd.

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