Kudo M | Hitachi Ltd. Tokyo Jpn

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概要

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著作論文

Structural and Chemical State Analysis of the Heat-Treated Au/GaSb(110) Interface by Means of Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS)
Dry Etching Damage and Activation Ratio Degradation in δ-Doped AlGaAs/InGaAs High Electron Mobility Transistors
Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth
Single and Double δ-Doped Al_Ga_As/In_Ga_As Pseudomorphic Heterostructures Grown by Molecular-Beam Epitaxy
InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
High-Performance In_Al_As/In_Ga_As High Electron Mobility Transistors on GaAs
Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
Estimation of Low-Energy Ion Bombardment Damage on GaAs(001) Surface by X-Ray Photoelectron Diffraction
Experimental and Theoretical Two-Dimensional X-Ray Photoelectron Diffraction Patterns from GaAs(001) Surface
Direct Atomic Site Determination of Foreign Atoms in a Crystal Surface Layer by X-Ray Photoelectron Diffraction
Estimation of Surface Crystal Regularity by Utilizing X-Ray Photoelectron Diffraction (XPED) Effects
Quantitative XPS Measurement on the Surfaces of GaP, GaSb and ZnSe Single Crystals
Quantitative X-Ray Photoelectron Spectroscopic (XPS) Measurement on the Surfaces of GaAs(111), (111) and (110) Single Crystals : Determination of Relative Photo-Auger Ionization Cross Sections and Electron Mean Free Paths by Using the Crystal Regularity o
Angular Denendence of XPS Intensities from GaAs (110) Surface : PHOTOEMISSION (MAINLY UPS AND XPS)

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