Cl-Assisted Selective Area Growth of InP by Metalorganic Vapor Phase Epitaxy
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概要
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In order to further integrate optical devices, chlorine-assisted selective area growth by metalorganic vapor phase epitaxy was investigated. By adding hydrogen chloride (HCl) to the conventional InP growth conditions, it was found that the spike-growth at the mask edge was suppressed, the flatness of growth plane was preserved, and an extremely high thickness enhancement ratio of 34 was obtained. Moreover, crystalline quality was not damaged by adding HCl. These results suggest that further integration of optical devices is possible by using Cl-assisted selective area growth.
- 社団法人応用物理学会の論文
- 1999-02-28
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