Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts
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概要
- 論文の詳細を見る
本著作物の著作権は公益社団法人応用物理学会に帰属します。／©（公社）応用物理学会 2013／© 2013 The Japan Society of Applied Physics
- 2013-00-00
著者
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Mishima Tomoyoshi
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Takahashi Toshifumi
Graduate School of Electrical and Electronics Engineering University of Fukui, Fukui 910-8507, Japan
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Shiojima Kenji
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
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Nomoto Kazuki
University of Notre Dame, Notre Dame, IN 46556, U.S.A.
関連論文
- Optimum Rapid Thermal Activation for Mg-doped p-type GaN
- Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
- Dry Etching of Lead-Free (K,Na)NbO Piezoelectric Films by Ar/CF Plasma
- Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts
- Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
- Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
- High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces
- Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)