Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts
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概要
- 論文の詳細を見る
Experimental results of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, which were grown at different turn-off temperatures (300, 600, and 900 °C) of NH3 gas supply (T_{\text{NH3}}) upon cooling at the end of growth to control the surface stoichiometry are reported. In the internal photoemission results, the Schottky barrier heights of all the samples were as large as around 2.2 eV, and a slight increase of 0.1 eV was observed when T_{\text{NH3}} decreased from 900 to 300 °C. At the same time, carrier capture and emission from acceptor-like midgap-level defects decreased as T_{\text{NH3}} decreased. The N-rich cooling condition tends to passivate the acceptor-type defects or create donor-type defects for compensation, and the pinning position at the interface might be moved slightly toward the conduction band edge.
- 2013-01-25
著者
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Tanaka Satoru
Department Of Anesthesiology Sapporo Medical University School Of Medicine
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Kajiwara Takashi
Department of Aeronautics and Astronautics, Faculty of Engineering, Kyushu University, Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Takahashi Toshifumi
Graduate School of Electrical and Electronics Engineering University of Fukui, Fukui 910-8507, Japan
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Shiojima Kenji
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
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Kajiwara Takashi
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Kaneda Naoki
R&D Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
R&D Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Mishima Tomoyoshi
R&D Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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