High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces

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概要

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• The effects of the inductively coupled plasma (ICP) etching damage on the electrical characteristics of low-Mg-doped p-GaN Schottky contacts were evaluated by high-temperature isothermal capacitance transient spectroscopy. A large single peak for an acceptor-type surface state was dominantly detected for as-grown samples. The energy level and state density were obtained to be 1.18 eV above the valence band, which is close to a Ga vacancy (V<inf>\text{Ga</inf>), and 1.5\times 10^{13} cm^-2, respectively. It was speculated that a small portion of Ga atoms were missing from the surface, and a high V<inf>\text{Ga</inf>density was observed in a few surface layers. The peak intensity decreased by 60% upon annealing at 800 °C, and further decrease was found by ICP etching. This decrease is consistent with the suppression of the memory effect in current--voltage characteristics. Upon annealing and ICP etching, since the V<inf>\text{Ga</inf>structure might be disordered, the peak intensity decreased.

• 2013-11-25

著者

• Mishima Tomoyoshi

  Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

• Kaneda Naoki

  Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan

• Shiojima Kenji

  Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

• Nomoto Kazuki

  University of Notre Dame, Notre Dame, IN 46556, U.S.A.

• Aoki Toshichika

  Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

• Wakayama Hisashi

  Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

関連論文

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• Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
• Dry Etching of Lead-Free (K,Na)NbO Piezoelectric Films by Ar/CF Plasma
• Electrical Characteristics of Surface-Stoichiometry-Controlled p-GaN Schottky Contacts
• Optimum Rapid Thermal Activation of Mg-Doped p-Type GaN
• Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts
• Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
• High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces
• Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)

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