Wakayama Hisashi | Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

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概要

関連著者

Mishima Tomoyoshi
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
Shiojima Kenji
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
Nomoto Kazuki
University of Notre Dame, Notre Dame, IN 46556, U.S.A.
Aoki Toshichika
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan
Wakayama Hisashi
Graduate School of Electrical and Electronics Engineering, University of Fukui, Fukui 910-8507, Japan

著作論文

High-Temperature Isothermal Capacitance Transient Spectroscopy Study on Inductively Coupled Plasma Etching Damage for p-GaN Surfaces

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