Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach-Zehnder Interferometer-Type Photonic Switch

スポンサーリンク

概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2008-09-25

著者

• KITATANI Takeshi

  Central Research Laboratory, Hitachi, Ltd.

• SHIOTA Takashi

  Central Research Lab., Hitachi, Ltd.

• Utaka Katsuyuki

  School Of Fundamental Science And Engineering Waseda University

• Nakamura Shinya

  School Of Fundamental Science And Engineering Waseda University

• Ueda Yuta

  School Of Fundamental Science And Engineering Waseda University

• Shiota Takashi

  Central Research Lab. Hitachi Ltd.

• Shiota Takashi

  Central Research Laboratory Hitachi Ltd.

• Kitatani Takeshi

  Central Research Laboratory Hitachi Ltd.

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
• InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
• Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
• Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
• Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach-Zehnder Interferometer-Type Photonic Switch
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Infrared Absorption Spectrum of GaInNAs
• GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
• Large Area InP Submicron TWO-Dimensional (2D) Periodic Structures Fabricated by TWO-Time Laser Holography
• Semiconductor Dispersion Compensator Based on Two Vertically Coupled Asymmetric Ridge Waveguides
• Long-Period-Grating-Loaded Semiconductor Separate-Confinement Heterostructure Waveguide for Polarization-Independent Gain-Equalizing Device
• Study on Tapered Multimode Interference-Based Coherent Lightwave Combiners(Optical Passive Devices and Modules, Recent Progress in Optoelectronics and Communications)
• Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005
• Estimation of Low Ga-Content (Less Than 10%) in A1GaAs by Spectroscopic Ellipsometry
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Wide-Tuning-Wavelength-Range LGLC Laser with Low-Loss Dual-Core Spot Size Converter
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
• Infrared Absorption Spectrum of GaInNAs
• Implementation of Tapered Multimode Interference Lightwave Combiner on Silicon-on-Insulator Substrate with Negligible Back-Reflection
• Michelson Interferometer-Type Wavelength Converter Integrated with Multimode Interference Coupler; Fundamental Characteristics
• Long-Period-Grating-Loaded Semiconductor Separate-Confinement Heterostructure Waveguide for Polarization-Independent Gain-Equalizing Device

もっと見る 閉じる

スポンサーリンク