Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template
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概要
- 論文の詳細を見る
The spontaneous formation of a two-layered structure in p-InGaN is observed with increasing Mg doping level. X-ray reciprocal space mappings reveal that the two layers are resulted from phase separation with different In contents and strain states. The bottom p-InGaN layer near the GaN template is totally strained with low-density dislocations, while the top layer is relaxed with high-density dislocations. The average In content in the relaxed layer is much higher than that in the totally strained one. The layered structure caused by phase separation is interpreted in terms of the compressive strain increase induced by Mg doping and the strain relaxation by dislocations.
- Japan Society of Applied Physicsの論文
- 2010-11-25
著者
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Takeguchi Masaki
High Voltage Electron Microscopy Station National Institute For Materials Science
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Sekiguchi Takashi
Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And
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Sekiguchi T
Institute For Materials Research Tohoku Unviersity
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science (nims)
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Sekiguchi Takashi
Department Of Chemistry And Materials Technology Kyoto Institute Of Technology
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science
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Takeguchi M
National Institute For Materials Science
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Sumiya Masatomo
Advanced Photovoltaics Center National Institute For Materials Science
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Sumiya Masatomo
Department Of Electrical And Electronic Engineering Shizuoka University
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Sumiya Masatomo
Department Of Electrical & Electronic Engineering Shizuoka University
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Nakayama Yoshiko
Advanced Nano-characterization Center National Institute For Materials Science
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Lee Woong
Advanced Electronic Materials Center National Institute For Materials Science
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Takeguchi Masaki
Advanced Nano-characterization Center National Institute For Materials Science
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Sang Liwen
Advanced Photovoltaics Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044,
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Sekiguchi Takashi
Advanced Nano-characterization Center, National Institute for Materials Science, Tsukuba, Ibaraki 30
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Sumiya Masatomo
National Inst. Materials Sci. Ibaraki Jpn
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Sekiguchi Takashi
Advanced Nano-characterization Center National Institute For Materials Science
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Takeguchi Masaki
Department Of Applied Physics Faculty Of Engineering Osaka University
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Sang Liwen
Advanced Photovoltaics Center National Institute For Materials Science
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Sekiguchi Takashi
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
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