Characterization Investigation of β-FeSi_2 Semiconductor by In Situ Ultrahigh-Vacuum Transmission Electron Microscopy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-30
著者
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Takeguchi Masaki
High Voltage Electron Microscopy Station National Institute For Materials Science
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Furuya Kazuo
National Institute For Materials Science
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Furuya Kazuo
High Voltage Electron Microscopy Station National Institute For Materials Science
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FURUYA Kazuo
Nanomaterials Laboratory, National Institute for Materials Science
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Takeguchi M
National Institute For Materials Science
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ZHANG Qi
Nanomaterials Laboratory, National Institute for Materials Science
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TANAKA Miyoko
Nanomaterials Laboratory, National Institute for Materials Science
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TAKEGUCHI Masaki
Nanomaterials Laboratory, National Institute for Materials Science
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HAN Ming
Nanomaterials Laboratory, National Institute for Materials Science
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Han M
Univ. Seoul Seoul Kor
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Furuya K
National Institute For Materials Science
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Takeguchi Masaki
Department Of Applied Physics Faculty Of Engineering Osaka University
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Zhang Qi
Nanomaterials Laboratory National Institute For Materials Science
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