Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis
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概要
- 論文の詳細を見る
- 2008-02-01
著者
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Takeguchi Masaki
High Voltage Electron Microscopy Station National Institute For Materials Science
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FURUYA Kazuo
National Research Institute for Metals
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Guo Xing
National Institute For Materials Science
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Furuya Kazuo
National Institute For Materials Science
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Furuya Kazuo
High Voltage Electron Microscopy Station National Institute For Materials Science
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MITSUISHI Kazutaka
National Institute for Materials Science
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TAKEGUCHI Masaki
Advanced Nano-characterization Center, National Institute for Materials Science
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Takeguchi M
National Institute For Materials Science
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OKUNO Hanako
National Institute for Materials Science
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TAKEGUCHI Masaki
National Institute for Materials Science
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Furuya K
National Institute For Materials Science
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Tanaka Miyoko
High Voltage Electron Microscopy Station National Institute For Materials Science
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Takeguchi Masaki
Department Of Applied Physics Faculty Of Engineering Osaka University
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Mitsuishi K
National Institute For Materials Science
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Takeguchi Masaki
National Institute for Material Science, 3-13 Sakura, Tsukuba 305-0003, Japan
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