Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-09-25
著者
-
Nakano Yoshitaka
Institute Of Science And Technology Research Chubu University
-
Nakano Yoshitaka
Institute Of Science And Technology Chubu University
-
TAKEGUCHI Masaki
Advanced Nano-characterization Center, National Institute for Materials Science
-
IROKAWA Yoshihiro
Advanced Electronic Materials Center, National Institute for Materials Science
関連論文
- Image Conservation in Inelastically Scattered Electrons in Reflection Electron Microscopy
- Development of a stage-scanning system for high-resolution confocal STEM
- Design features of a new ultra-high vacuum electron microscope with an omega filter
- Deep-Level Optical Spectroscopy Investigation of Degradation Phenomena in Tris(8-hydroxyquinoline) Aluminum-Based Organic Light-Emitting Diodes
- Deep-Level Optical Spectroscopy Investigation of Band Gap States in AlGaN/GaN Hetero-Interfaces
- Study of Defects and Strains on Cleaved GaAs (110) Surface by Reflection Electron Microscopy
- Observation of GaAs(110)Surface Defect by Reflection Electron Holography
- Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis
- Relationship between X-ray Intensity and Electric Bias on Al_2O_3 Surface during Low Energy Ga^+ Irradiation
- Amorphous-like nanostructures stabilized in nanometre-sized alloy clusters (Eighth Conference on Frontiers of Electron Microscopy in Materials Science)
- Structural observation of Pd silicide islands on Si(111) surfaces with UHV-TEM/STM (Eighth Conference on Frontiers of Electron Microscopy in Materials Science)
- High-resolution transmission electron microscopy observation of the cross-sectional structure of reconstructed silicon (5,5,12) surface
- New scheme for calculation of annular dark-field STEM image including both elastically diffracted and TDS waves
- High Resolution Transmission Electron Microscopy Study on the Structure of Ge Nanoparticles by Using an Ultrahigh Vacuum-Molecular Beam Epitaxy-Transmission Electron Microscope System
- Observation of Reconstructed Pt(100) Surface by Reflection Electron Microscopy
- Deep-Level Characterization of n-GaN Epitaxial Layers Using Transparent Conductive Polyaniline Schottky Contacts
- HRTEM observation of BN films segregated on stainless steel SUS304 by low temperature heat treatment (Eighth Conference on Frontiers of Electron Microscopy in Materials Science)
- Damage Analysis of n-GaN Crystal Etched with He and N2 Plasmas