Modeling the Process of Electron-Beam-Induced Deposition by Dynamic Monte Carlo Simulation

概要

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Dynamic Monte Carlo simulation was carried out to investigate the growth model of deposit on film substrates in electron-beam-induced deposition (EBID). Both 200 and 20 keV electrons were used in the simulation to compare the effects of primary beam energy. It was concluded that the deposition can take place on both top and bottom surfaces of thin films. At the beginning stage, the deposit grows preferentially downward from the bottom surface, and the length of the downside part first increases markedly and then becomes gradually saturated. However, the growth of the upside part is steady at an almost constant rate, and its length exceeds that of the downside part due to the saturation of the downside length. The diameter of the deposit also saturates as the number of impinging electrons increases. Although the growth rate of a deposit is lower for 200 keV electrons, they are capable of obtaining a spatial resolution higher than that of 20 keV electrons. The growth model was verified by experimental EBID of tungsten tips on carbon film using 200 keV electrons.
2005-07-15