Influences of Cu and Fe Impurities on Oxygen Precipitation in Czochralski-Grown Silicon

スポンサーリンク

概要

• 論文の詳細を見る

• Characteristics of oxygen precipitation in Czochralski-grown silicon (CZ-Si) intentionally contaminated with Cu or Fe are investigated by means of Fourier-transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), electron-beam-induced-current (EBIC) mapping and etch pit observation. It is found that oxygen precipitation is not influenced by the presence of Cu impurities, while it is enhanced significantly by the presence of Fe impurities even if the concentration of Fe is much lower than that of Cu. Precipitations of supersaturated Cu and O impurities are found to proceed independently of each other in Si crystals. Oxygen precipitates in an Fe-contaminated specimen are much denser and smaller than those in a noncontaminated specimen. Fe impurities seem to react with minute Si oxide particles which are present in as-grown CZ-Si crystals and reduce the nucleation barrier for oxygen precipitation.

• 社団法人応用物理学会の論文
• 1996-08-15

著者

• SEKIGUCHI Takashi

  Institute for Materials Research, Tohoku University

• Sumino K

  Tohoku Univ. Sendai Jpn

• Jablonski J

  Komatsu Electronic Metals Co. Ltd. Hiratsuka Jpn

• SUMINO Koji

  Institute for Materials Research,Tohoku University

• Sumino Koji

  Department Of Physics And Institute Of Solid State Physics Nanjing University

• Sekiguchi Takashi

  Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And

• Sekiguchi T

  Institute For Materials Research Tohoku Unviersity

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science (nims)

• Sekiguchi Takashi

  Department Of Chemistry And Materials Technology Kyoto Institute Of Technology

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science

• Shen B

  Department Of Physics & National Laboratory Of Solid State Microstructures Nanjing University

• SHEN Bo

  Institute for Materials Research, Tohoku University

• JABLONSKI Jaroslaw

  Institute for Materials Research, Tohoku University

• Sumino Koji

  Institute For Materials Reseach Tohoku University

• Sumino Koji

  Institute For Materials Research Tohoku University:(present Address) Nippon Steel Corp.

• Sekiguchi Takashi

  Advanced Nano-characterization Center National Institute For Materials Science

• Sekiguchi Takashi

  Institute For Materials Research Tohoku University

• Jablonski Jaroslaw

  Institute For Materials Research Tohoku University:(present Address) Komatsu Electronic Metals Co. L

関連論文

• Polymorphous Low Grade Adenocarcinoma of Minor Salivary Gland Origin in the Oral Floor : Report of a case with an immunohistochemical study and an analysis of proliferative activity
• InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Investigation of the Polarization-Induced Charges in Modulatlon Doped Al_xGa_N/GaN Heterostructures through Capacitance-Voltage Profiling and Simulation
• Influence of Ferroelectric Polarization on the Properties of Two-Dimensional Electron Gas in Pb(Zr_Ti_)O_3/Al_xGa_N/GaN Structures
• Nanoprocessing of Diamond Using a Variable Pressure Scanning Electron Microscope
• Electric Properties in Biofilms Studied by Resonant Auger Electron Spectroscopy
• Magnetic Domain Structure of Fe_3Al Alloy with Two-Phase Mixture Studied by Lorentz Microscopy
• Study of the Temperature Dependence of the Magnetization Direction in Cobalt Single Crystals by 1 MV Lorentz Electron Microscopy
• ESR Study on Local Structure of UV-Induced Midgap States in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4, en=ethylenediamine
• ESR Observation of the Motion of Optically Induced Paramagnetic Dimers in [Pt (en)_2][Pt (en)_2Cl_2](ClO_4)_4(en=ethylenediamine)
• Investigation of Switching Kinetics of Interface Traps in Metal-Oxide-Semiconductor-Field-Effect-Transistors with Ultra-narrow Channels
• Precipitation of Cu and Fe in Dislocated Floating-Zone-Grown Silicon
• Photodegradation of Polysilanes Studied by Far-Infrared Spectroscopy
• Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux
• Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
• Effects of As_2 Flux and Atomic Hydrogen Irradiation for Growth of InGaAs Quantum Wires by Molecular Beam Epitaxy
• Positron Annihilations Associated with Defects in Plastically Deformed Si
• Charge State Dependences of Positron Trapping Rates Associated with Divacancies and Vacancy-Phosphorus Pairs in Si
• The Nature of Nitrogen-Oxygen Complexes in Silicon
• Nitrogen-Oxygen Complexes as Shallow Donors in Silicon Crystals
• Effect of Uniaxial Stress on the Photoluminescence from Plastically Deformed Silicon
• Radiative Recombination on Dislocations in Silicon Crystals
• Defects with Deep Levels in GaAs Induced by Plastic Deformation and Electron Irradiation : Semiconductors and Semiconductor Devices
• Surface micro-XAFS and its application to real-time observation of organic thin films (Proceedings of the 5th international symposium on practical surface analysis, PSA-10 and 7th Korea-Japan international symposium on surface analysis)
• Cathodoluminescence study of AIGaAs/GaAs multilayers grown on ridge-type triangles on GaAs (111)A substrates
• Quick observation of photoelectron emission microscopy with focused soft X-rays using poly-capillary lens (Proceedings of the 5th international symposium on practical surface analysis, PSA-10 and 7th Korea-Japan international symposium on surface analysis
• Optical Properties of New Kinds of Thermal Donors in Silicon
• Yellow Emission from Zinc Oxide giving an Electron Spin Resonance Signal at g=1.96
• Study of Photocurrent Properties of GaN Ultraviolet Photoconductor Grown on 6H-SiC Substrate
• Chemical-State-Selective Mapping at Nanometer Scale Using Synchrotron Radiation and Photoelectron Emission Microscopy
• X-Ray photoelectron Spectroscopic Observation on the Formation of Carbon Nitride Thin Films Produced by Low-Energy Nitrogen Ion Implantation
• Clinical Significance of Interstitial Collagen Deposition at the Invading Edge in Oral Cancer : Immunohistochemistry for Type I Collagen
• Clinical and Histological Study on the Pathologically Complete Response by Induction Chemotherapy in Patients with Oral Squamous Cell Carcinoma
• Distribution of Collagen Types I, III, IV, V, VI, and VII in Human Oral Cancer: Relation to Histological Malignancy
• Observation of Lattice Defects in Solid Helium by SR X-Ray Topography
• Observation of Magnetic Domain Walls in Co and Co-Fe by Differential-Phase-Contrast STEM
• Complexes of Nitrogen and Point Defects in Silicon
• Cathodoluminescence imaging for identifying uptaken fluorescence materials in Kupffer cells using scanning electron microscopy
• Influences of Cu and Fe Impurities on Oxygen Precipitation in Czochralski-Grown Silicon
• Zinc-mediated Coupling Reaction of 2-Bromo-2, 3, 3, 3-tetrafluoropropanoate with Various Chiral Imines. Simple and Effective Access to Optically Active α-Fluoro-α-(trifluoromethyl)-β-amino Esters
• Highly Stereoselective Aldol-type Reaction of 2-Bromo-2, 3, 3, 3-tetrafluoropropanamide with Aldehydes Leading to erythro-α-Fluoro-α-(trifluoromethyl)-β-hydroxy Amides
• Crystal Size Dependence of Fluorescence Spectra from Perlene Nanocrystals Evaluated by Scanning Near-Field Optical Microspectroscopy
• Cathodoluminescence investigation of organic materials
• Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template
• Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon
• Observation of polarization property in near-field optical imaging by a polarization-maintaining fiber probe
• Cathodoluminescence study of one-dimensional freestanding widegap-semiconductor nanostructures : GaN nanotubes, Si_3N_4 nanobelts and ZnS/Si nanowires
• Growth and Characterization of Bulk Si-Ge Single Crystals
• Strong Photoluminescence from the Reaction Product of Erbium and Oxygen on Silicon Crystal
• Formation Energy of Antisite Boron in GaAs
• Generation Kinetics of EL2 Centers in GaAs : Condensed Matter
• Electron Spin Resonance Study of Deformation-Induced Si-Kl Centers in Silicon
• Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
• Effect of Hydrogenation on Zn0 Luminescence
• Crystal growth and characterization of gallium oxynitride nanowires grown on seed crystals
• Input, State Observability of Time-Varying Systems with Unknown State and Input Values
• Expected Time without Failure for a Year
• Approximate Optimal Servo-System with a Restricted State Variable
• Silver-Coated Polydiacetylene Nanocrystals Fabricated Using Surfactants as Binder
• Nanoprocessing of Diamond Using a Variable Pressure Scanning Electron Microscope
• Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots
• Crystal Size Dependence of Fluorescence Spectra from Perylene Nanocrystals Evaluated by Scanning Near-Field Optical Microspectroscopy

もっと見る 閉じる

スポンサーリンク