Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications
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概要
- 論文の詳細を見る
An envelope function framework was used to calculate the conduction band structure of AlN/GaN quantum wells for application to quantum cascade lasers. We took into account the piezo- and spontaneous polarization fields in the nitride quantum wells. The design of the quantum cascade structures in the AlN/GaN system becomes much simpler if we utilize the effect of polarization fields. [(AlN)1/(GaN)n1]m/(AlN)n2 quantum wells were prepared using hot-wall epitaxy for mid-infrared quantum cascade laser applications, and X-ray diffraction and transmission electron microscopy (TEM) measurements were performed on them. The X-ray diffraction measurements of the quantum wells were in good agreement with the theoretical pattern, and the coherent growth of quantum wells on the GaN buffer layers was ascertained by X-ray reciprocal mapping. The existence of a single atomic layer of AlN was observed by TEM measurements.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-08-15
著者
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Fujiyasu Hiroshi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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Inoue Yoku
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University
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Makino Hisao
Institute For Material Research Tohoku University
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Ishida Akihiro
Department Of Applied Physics The National Defense Academy
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Ko Hang-ju
Institute For Materials Research Tohoku University
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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Ko Hang-Ju
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Ishida Akihiro
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Makino Hisao
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Matsue Kazuma
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Setiawan Agus
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Kim Jung-Jin
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Fujiyasu Hiroshi
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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Inoue Yoku
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
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