Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2003-07-15
著者
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MAKINO Hisao
Institute for Materials Research, Tohoku University
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Koo Bon-heun
Department Of Ceramic Science And Engineering Changwon National University
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KAJIKAWA Yasutomo
Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Eng
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YAO Takafumi
Institute for Materials Research, Tohoku University
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Yao Takafumi
Institute For Materials Research Tohoku University
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Makino Hisao
Institute For Materials Research Tohoku University
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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NUMATA Toshifumi
Faculty of Science and Technology,Hirosaki University
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NAKAZAWA Hideki
Faculty of Science and Technology,Hirosaki University
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Makino Hisao
Institute For Material Research Tohoku University
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Mashita M
Research And Development Center Toshiba Corporation
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Nakazawa Hideki
Faculty Of Science And Technology Hirosaki University
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Numata Toshifumi
Faculty Of Science And Technology Hirosaki University
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Kajikawa Yasutomo
Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi
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Kajikawa Yasutomo
Department Of Electric And Control Systems Engineering Interdisciplinury Faculty Of Science And Engi
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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Mashita Masao
Faculty of Science and Technology, Hirosaki University
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