Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells

概要

論文の詳細を見る
Samples having In0.12Ga0.88As/GaAs multiple quantum well (MQW) structures were grown by molecular-beam epitaxy at substrate temperatures ranging from a normal temperature of 550 °C to a low temperature of 250 °C. When the samples were grown with low As4/Ga beam equivalent pressure ratios of 5–6, photoluminescence (PL) was observed in spite of low growth temperatures of 250–300 °C. Furthermore, after rapid thermal annealing (RTA) at approximately 900 °C, the intensities of PL from the samples grown at 300 and 250 °C were improved so as to become comparable to that from the as-grown sample grown at 550 °C. At the same time, the RTA caused blue shifts in PL peak energy for these low-temperature grown samples. From the shifts in PL peak energy, the diffusion length of In–Ga interdiffusion was estimated to be approximately 4 nm for the 900 °C RTA and the activation energy was estimated to be $2.2 \pm 0.6$ eV in these low-temperature grown samples.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-15