X-Ray Diffraction Measurements on Lattice Mismatch of InTlAs Grown on InAs Substrates
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-01-15
著者
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梶川 靖友
Univ. Tokyo Tokyo Jpn
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KAJIKAWA Yasutomo
Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Eng
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ASAHINA Shuuichi
Department of Material Engineering, Institute of Industrial Science and Technology
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KANAYAMA Nobuyuki
Department of Material Engineering, Institute of Industrial Science and Technology
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Asahina S
Department Of Material Engineering Institute Of Industrial Science And Technology
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Kajikawa Yasutomo
Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi
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Kanayama N
Department Of Material Engineering Institute Of Industrial Science And Technology
関連論文
- X-Ray Diffraction Measurements on Lattice Mismatch of InTlAs Grown on InAs Substrates
- GaAs基板上の長波長帯光通信用レーザの開発に向けたGaAs基板上のT1GaAsのMBE成長の試み
- 半導体量子構造における波動関数工学の新しい流れ
- 低温MBE成長TlGaAsにおけるエピタキシャル限界膜厚の組成依存性
- Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
- Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition
- Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure(Heterostructure Microelectronics with TWHM2003)
- Influence of Barrier Layers on Optical Anisotropy of (110)-Oriented Strained Quantum Wells
- Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells