Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

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• A TlGaAs/GaAs multiple quantum-well (MQW) structure having four identical well layers was grown on a GaAs (001) substrate by low-temperature molecular-beam apitaxy (MBE) at 190℃. The (004) X-ray diffraction (XRD) curve of this sample showed satellite peaks up to the ±3rd order at least The measured XRD ct〜rve agreed well with the theoretically simulated one with a Tl content of x = 7% and a width of 57 Å for the Tl_xGa_<1-x>As wall layers. This result indicates that the grown MQW structure has good single-crystalline quality as well as flat arid sharp interfaces.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• NISHIMOTO Naoki

  Department of Surgical Oncology, Research Institute for Radiation Biology and Medicine

• Kajikawa Yasutomo

  Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi

• Kobayashi Nobuhiro

  Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi

• KAWASAKI Naoyuki

  Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Eng

• HIGUCHI Yasuaki

  Department of Electric and Control Systems Engineering, Interdisciplinary Faculty of Science and Eng

• Nishimoto Naoki

  Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi

• Kawasaki Naoyuki

  Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engi

• Higuchi Yasuaki

  Department Of Electric And Control Systems Engineering Interdisciplinary Faculty Of Science And Engineering Shimane University

関連論文

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• Low-Temperature Growth of InAs on Glass and Plastic Film Substrates by Molecular-Beam Deposition
• Low-Temperature MBE Growth of a TlGaAs/GaAs Multiple Quantum-Well Structure(Heterostructure Microelectronics with TWHM2003)
• Influence of Barrier Layers on Optical Anisotropy of (110)-Oriented Strained Quantum Wells
• Effect of Rapid Thermal Annealing on Photoluminescence Properties of Low-Temperature Grown InGaAs/GaAs Multiple Quantum Wells
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