Effects of Substrate Bias Voltage on Structural, Mechanical and Tribological Properties of Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Methane and Argon Gases

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概要

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• We have deposited diamond-like carbon (DLC) films by plasma-enhanced chemical vapor deposition using CH4 and Ar gases, and have investigated the structure, chemical bonding, adhesion strength, and tribological properties of the deposited films. The film properties have been characterized by visible Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), scratch tests, and ball-on-plate friction tests. The fraction of sp3C–C and C–H bonds in the deposited films, as estimated from C 1s-XPS peaks, decreased with increasing substrate bias voltage. Raman analysis showed that the structural ordering of the films was induced by increasing the substrate bias voltage. The intensity of the band in the sp3-CH3 stretching in the deposited films decreased with the substrate bias voltage. When the Ar-flow rate was increased, the Ar sputter etching and structural ordering of the films were encouraged. As the bias voltage was increased, the critical load determined by conducting scratch tests and the wear resistance of the films increased.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-01-25

著者

• Nakazawa Hideki

  Faculty Of Science And Technology Hirosaki University

• Asai Yuhki

  Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Mashita Masao

  Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Katoh Shigeki

  Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Nakazawa Hideki

  Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Mashita Masao

  Faculty of Science and Technology, Hirosaki University

関連論文

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• Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
• Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
• Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source
• Growth of GaN Films by Hot-Mesh Chemical Vapor Deposition Using Ruthenium-Coated Tungsten Mesh
• Effects of Substrate Bias Voltage on Structural, Mechanical and Tribological Properties of Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition Using Methane and Argon Gases
• Comparison of Film Properties between Hydrogenated and Unhydrogenated Diamond-Like Carbon Films Prepared by Radio-Frequency Magnetron Sputtering

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