Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-30
著者
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Koo Bon-heun
Department Of Ceramic Science And Engineering Changwon National University
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ARAI Kenta
Institute for Materials Research, Tohoku University
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YAO Takafumi
Institute for Materials Research, Tohoku University
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Yao Takafumi
Institute For Materials Research Tohoku University
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Arai Kenta
Institute For Materials Research Tohoku University
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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HIYAMA Yoshihito
Faculty of Science and Technology, Hirosaki University
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KOO Bon-Heun
Institute for Materials Research, Tohoku University
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Mashita M
Research And Development Center Toshiba Corporation
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Hiyama Yoshihito
Faculty Of Science And Technology Hirosaki University
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Yao Takafumi
Institute For Interdisciplinary Research Tohoku University
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Mashita Masao
Faculty of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan
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Mashita Masao
Faculty of Science and Technology, Hirosaki University
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