GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-08-20
著者
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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MASHITA Masao
Faculty of Science and Technology,Hirosaki University
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Ishikawa T
Fujitsu Laboratories Ltd.
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Sasaki M
Industrial Res. Center Of Shiga Prefecture Shiga
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Mashita M
Research And Development Center Toshiba Corporation
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Mashita Masao
Toshiba R & D Center
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ISHIKAWA Hironori
TOSHIBA Research & Development Center
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KAWAKYU Yoshito
TOSHIBA Research & Development Center
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SASAKI Masahiro
TOSHIBA Research & Development Center
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Kawakyu Y
Toshiba Corp. Yokohama Jpn
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Sasaki M
Dow Corning Toray Silicone Co. Ltd. Chiba Jpn
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