Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces

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DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
Low-Temperature Synthesis of C-Axis-Oriented Polycrystalline Aluminum Nitride Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using AlBr_3-N_2-H_2-Ar Gas System
Preparation of AlN-Al_2O_3 Composite Films by Microwave Plasma Chemical Vapor Deposition
Effect of Ar Gas Addition on AlN Film Formation by Microwave Plasma Chemical Vapor Deposition
Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVD
Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
Effect of Heating SiH_4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon ( Plasma Processing)
High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
Dependence of ECR Plasma Etching Characteristics on Sub Magnetic Field and Substrate Position
Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
Low-Pressure OMVPE of GaAs Using Triethylgallium
Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor
Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
Hg-Sensitized Photochemical Vapor Depositiorn Application to Hydrogenated Amorphous Silicon Photoconversion Layer Overlaid on Charge Coupled Device
Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine
Epitaxial Growth Mechanism of the (100) As Surface of GaAs : The Effect of Positive Holes : Condensed Matter
On the Reaction Mechanism of the Pyrolyses of TMG and TEG in MOCVD Growth Reactors
The Selective Deposition of a Silicon Film on Hydrogenated Amorphous Silicon by Mercury Sensitized Photochemical Vapor Deposition
Selective Deposition of Silicon by Mercury Sensitized Photochermical Vapor Deposition
Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
Ab Initio Molecular Orbital Study on the Reaction of Trimethylaluminum with an H Radical
Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine
Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication

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