Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_<1-x>As (x=0-0.28) Doped Using Disilane

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-11-20

著者

• KATAOKA Yuji

  Fujitsu Laboratories Ltd.

• Kataoka Y

  Toshiba Corp. Yokohama Jpn

• FUJII Toshio

  Fujitsu Laboratories Ltd.

• サンドゥー アダルシュ

  東工大

• Sandhu A

  Fujitsu Laboratories Ltd.

• Sandhu Adarsh

  Fujitsu Laboratories Limited

• ANDO Hideyasu

  Fujitsu Laboratories Ltd.

• ISHIKAWA Hideaki

  Fujitsu Laboratories Ltd.

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Ishikawa T

  Fujitsu Laboratories Ltd.

• Ando H

  Toshiba Corp. Kawasaki Jpn

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