Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine

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Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources
Doping Characteristics of Gas-Source MBE-Grown n-Al_xGa_As (x=0-0.28) Doped Using Disilane
A Study of Cold Dopant Sources for Gas Source MBE : The use of Disilane as an N-Type Dopant of Al_xGa_As (x=0-0.28) and Trimethylgallium as a P-Type Dopant of GaAs
MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
Suppression of Beryllium Diffusion by Incorporating Indium in AlGaAs for HBT Applications using Molecular Beam Epitaxy
Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine
Role of Species Generated from Phosphorus Sources in InGaP Growth Mechanism
Ab Initio Molecular Orbital Study on the Reaction of Trimethylaluminum with an H Radical
Metalorganic Chemical Vapor Deposition of InAlP Using Tertiarybutylphosphine
Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication

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